10 results
Deep Level Defects in He-implanted n-6H-SiC Studied by Deep Level Transient Spectroscopy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 815 / 2004
- Published online by Cambridge University Press:
- 15 March 2011, J5.5
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- 2004
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Vacancies in electron irradiated 6H silicon carbide studied by positron annihilation spectroscopy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 792 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, R3.19
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- 2003
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Gallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescence
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- Journal:
- MRS Online Proceedings Library Archive / Volume 692 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, H9.5.1
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- 2001
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Structural and Electrical Properties of Beryllium Implanted Silicon Carbide
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- Journal:
- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 117
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- 1999
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Probing of microvoids in high-rate deposited a-Si: H thin films by variable energy positron annihilation spectroscopy
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- Journal:
- Journal of Materials Research / Volume 13 / Issue 10 / October 1998
- Published online by Cambridge University Press:
- 31 January 2011, pp. 2833-2840
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- October 1998
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Identification of Vacancy-Like Defects in High-Rate Grown a-Si Before and After Light Soaking by Vepas
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- Journal:
- MRS Online Proceedings Library Archive / Volume 507 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 637
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- 1998
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Aluminum and Electron-Irradiation Induced Deep-Levels In N-Type And P-Type 6H-Sic
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- Journal:
- MRS Online Proceedings Library Archive / Volume 510 / January 1998
- Published online by Cambridge University Press:
- 10 February 2011, 455
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- January 1998
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INTERFACE CHARACTERISATION AND INTERNAL ELECTRIC FIELD EVALUATION OF a-Si:H PIN SOLAR CELL BY VARIABLE ENERGY POSITRON ANNIHILATION SPECTROSCOPY
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- Journal:
- MRS Online Proceedings Library Archive / Volume 507 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 643
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- 1998
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Study of Microvoids in High-Rate a-Si:H Using Positron Annihilation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 467 / 1997
- Published online by Cambridge University Press:
- 15 February 2011, 525
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- 1997
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Stark Shift and Field Induced Tunneling in Doped Quantum Wells with Arbitrary Potential Profiles
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- Journal:
- MRS Online Proceedings Library Archive / Volume 450 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 165
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- 1996
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